Assume that Fermi energy level is 0.33eV above valance band energy. Calculate the electrons concentration (in Tera electrons/m) for the intrinsic silicon at T-400K.
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- Assume that Fermi energy level is 0.33eV above valance band energy. Calculate the electrons concentration (in Tera electrons/m3) for the intrinsic silicon at T=400K.A sample of N-type silicon is at the room temperature. When an electric fi eld with strength of 1000 Vlcm is applied to the sample. the hole velocity is measured and found to be 2 x 105 cm/sec.Calculate the holes concentration (in Tera electrons/m³) for the intrinsic silicon at (350°k). (Ne=2 ×10 23 /m³, Ny= N/2).
- Example 1: Find the hole concentration in N-type semiconductor when the donor concentration is 2 x102cm-3 and intrinsic value of silicon material at T = 300° K is 1.25 x10 cm-3. ст %3D стThe electron and hole diffusion coefficients in silicon are D, 35 cm²/s %3D and D,=12.5 cm2/s, respectively. Calculate the electron and hole diffusion current densities (a) if an electron concentration varies linearly fromn= 105 cm-3 to n = 1016 cm-3 over the distance from x =0 to x = 2.5 um and (b) if a hole con- centration varies linearly from p = 1014 cm-3 to p 5 x 1015 cm-3 over the dis- tance from x =0 to x 4.0 µm. %3D %3D %3D write the final answer below a) hole current density: electron current density b) hole current density: electron current densityGiven that for silicon at room temperature, Ny = 1.04 x 10¹9 cm³ and Nc = 2.8 x 10¹⁹ cm-³. Calculate and illustrate where the Fermi-level is located in the energy band for the following cases: (a) n-type with Na = 10¹7 cm-³ (b) p-type with Na = 10¹4 cm-³
- JA silicon wafer is doped with 1015 cm 3 donor atoms. Assume light generates density of electrons and holes equal to 1018 cm-3.Calculate the total electron and hole concentrations and location of the quasi-Fermi levels for the electrons and holes with respect to the intrinsic Fermi level. (n = 1x1010 cm-3, Ne = 2.8x1019 cm-3, Ny = 1.04x1019 cm3, T = 300K). %3DSilicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.xx=41 Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N₁ = 4×10¹6 cm³ The ionization energy for Indium is given as 0.16eV. Calculate: a) The carrier concentrations no. Po and the Fermi level E-E, at the temperature of T = xx+60 °K. 40+ xx 100 b) The temperature at which Po N₁ cm, for xx<50 60+xx N₁ cm³, for xx 250 100 (Ex: xx = 00 → Po=0.4N₁ -1.6x10¹ cm³; xx=99 Po=1.59N, -6.36x10¹ cm
- The conductivity of an intrinsic silicon sample is found to be 1.02 m.S.m-1 at 297.2 K and 2.15 mS.m-1 at 307.9 K. What is the bandgap energy in silicon? (Boltzmann constant: 1.38064852 * 10-23 m². kg. s-². K−¹) Answer:A silicon ingot is stained with ( Nd = 10 ^ 16atom / cm ^ 3) ars enic atoms. A) Get the density of the carrier s and b) Get the Fermi level at r oom temperature T = 300k?A silicon p-n junction (ni = 1010 cm3, Na = 1017 cm-3 and Nd = 4 x 1016 cm 3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C.