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- .9:0A Asiacell Q1.jpg Find the current through the diode in the circuit shown. Assume the diode to be ideal. 50 Ω A R1 V = 10 V 50 R2 B AAn n-type semiconductor material, which contains the 1016 electrons/cm³ and the charge carrier mobility is 1100 cm²/Vs. (i) Determine resistivity of the n-type semiconductor material. the conductivity and the (ii) Determine the diffusion coefficient at room temperature. (iii) Evaluate the Einstein relation for the majority charge carrier in n-type material.A diode is an electronic component through which an electric current flows according to the potential difference applied across its terminals. The figure to the side shows the typical curve of a diode. At what point on the curve is the resistance of the diode minimum? At what point is it maximum? Justify your answer.
- Q/ A Germanium p-n junction diode has a reverse saturation current of 3.97 x 10-19A at room temperature. The diode is forward-biased with a voltage source of 1 V. Calculate the dynamic resistance of the Ge diode at room temperature.Operating point represents.…... A. Values of Vce and Iç when signal is applied B. The magnitude of signal C. Zero signal values of Vce and Ic D. None of the above C D В A CLEAD MY CHOICEGiven V(X) = 6.5 In proof testing of circuit boards, the probability that any particular diode will fail is .01. Suppose a circuit board contains 400 diodes. Write the suitable approximate pmf for the number of diodes on a board that fail.
- A semiconductor Hall probe has a Hall coefficient (RH) of -3.75 x 105 m³/C in the temperature range of 130 K and 350 K. Its electrical conductivity is 150 (2.m)-¹. A. Deduce, with explanation, the type of carriers in the semiconductor B. Calculate the density and mobility of the charge carriers C. Give 2 examples of Hall probe application and 2 material fabrication methods for Hall effect proves.The voltage of a BYZ83 type Zener diode is given as V, = 20v, power P, = 300mW, and Zener resistance R, = 20. a) Find the maximum current(Imm) that can flow through.Two diodes are connected in parallel as shown below: p(0.c.) = 0.15 p (s.c.) = 0.25 A diode may fail in one of the two ways: by short-circuiting or by open-circuiting. What is the probability that the two-diode arrangement will work as a diode?
- The diffusion constant for injected electrons in a molecular crystal is 1x10^-2 cm^2/s at room temp. What is the mobility? What is the drift velocity in n electric field of 1x10^5 Volts/cm?An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =K: Estimate the ratio of the electron densities in the conduction bands of silicon (Eg 1.14 eV) and gallium arsenide (Eg = 1.42 eV) at 400 K.