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- The characteristic energy for KCl is 1.4105eV . (a) Determine for the KC1 molecule, (b) Find the separation distance between the K arid Cl atoms.Why does the horizontal Line in the graph in Figure 9.12 suddenly stop at the Fermi energy? Figure 9.12 (a) Density of state for a free electron gas; (b) probability that a state is occupied at T = 0 K; (c) density if occupied states at T = 0 k.Example 1: Find the hole concentration in N-type semiconductor when the donor concentration is 2 x1012cm-3 and intrinsic value of silicon material at T = 300° K is 1.25 x10 cm-3. ст %3D
- B/ A new semiconductor material is to be n-type and doped with 6x10¹ cm³ donor atoms. Assume complete ionization and assume N,= 0. The effective density of states functions are N, =1.&r 10¹ cm and N,= 1.2x10 cm³ at 7-300 K. A special semiconductor device fabricated with this material requires that the electron concentration be no greater than 6.08x10¹ cm³ at 7= 400 K. What is the minimum band gap energy required in this new material?Q2: calculate the diffusion current density for a given semiconductor. Consider silicon at T=300k. Assume the electron concentration varies linearly from n=10 '² cm³ to n=10 16cm³ over the distance from x=0 to 3 µm assume Dn=35 cm²/secSilicon is doped with phosphorus atoms (column V of Mendeleev table) with a concentration of 1018 cm-3 a- What is, at 27 °C, the electron density in doped Si. Use this result to derive the hole density. Which type of semiconductor is obtained? b- Calculate, at 27 °C, the position of the Fermi level EF and plot the band diagram.
- Q1/ At 300K, the intrinsic concentration of Ge is 2.5 x 1019 m-3. Given thet m2 and 0.18 V. Sec m2 the mobility of electron and hole are 0.38 respectively. V. Sec Find the conductivity of pure Ge semiconductor.a) If the electron concentration increase along the x-axis of a conductor as shown in equation below: n=3-1030x2+2- 102x+1026 And D=1.2 x 10-4 m/s. Find the diffusion current at x =Smm? b) Find the minimum electron concentration nmin in semiconductor?Problem 1. The resistivity of an intrinsic semiconductor sample at 280 K was measured to be 15 Q·cm. At 320 K, it was 0.6 Q cm. Assuming that the mobilities of both electrons and holes decrease with temperature as µejh~ 1/T 32, find the bandgap of this material. Problem 2. You wish to create a 10-k2 resistor using an n-type (Na= 0) silicon bar of length L = 5 mm and cross-sectional area A = 0.05 mm. Assume complete ionization with no = Na and neglect the hole contribution to conductivity. Electron mobility in this material is known to depend on donor concentration according to an empirical formula (see section 6 of the Wikipedia article https://en.wikipedia.org/wiki/Electron_mobility) Hmax - Mmin µ(Na) = Hmin + 1+ (Na/N,)" with the parameters Umin 65 cm²/(V-s), µmax 1330 cm/(V s), N,= 8.5·1016 cm³, a = 0.72. (a) Determine the conductivity of your material needed to obtain the desired resistance. (b) Find the doping concentration needed to obtain the desired resistance. You will need to…
- C- Silicon is doped with acceptor atoms to a density of 10 m-3. If it is assumed that all acceptor centres are ionized, calculate the conductivity of the extrinsic silicon. Given that intrinsic density is 1.4 x 1016 m-3, ue 0.16 m-3 and uh -0.045 m 3.Physics . Determine the number of conduction electrons/m3 in pure silicon AND silicon’s conductivity σfora) T = 10 Kb) T = 100 Kc) T = 1000 Kd) Conceptually, why does Si’s conductivity get better with increasing temperature?(For intrinsic Si, me* = 1.08me, μe = 1400cm2/V∙s, mh* = 0.60me, μh = 450cm2/V∙s, at. wt. = 28.085g/mol, density = 2.329 g/cm3).A- Consider a silicon crystal at 27° C doped with atoms at a concentration of Na= 10" cm m. -3 %3D 1- Calculate the conductivity of the sample. Given µ, = 800 cm/V.s. %3D 2- Locate position of Fermi level E; with respect to intrinsic Fermi level ER
