A silicon p-n junction (n = 1010 cm-3, Na = 1017 cm-3 and Na = 4 x 1016 cm3) is biased with an applied voltage Va = -5 V. Calculate the built-in potential, the depletion layer width and the depletion capacitance. Take the temperature as 27°C. %3D %3D
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- A Si p- n junction with cross sectional area A= 0.01cm? is formed with N3=2x1017 cm3, Na= 1017cm3. Calculate: a) contact potential b) the depletion region width and c) the junction capacity at 0 and -2 Volts.An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87Pure silicon wafer at the room temperature has an electrical conductivity of 5.5x1040'm3. The electron and hole mobilities of charge carriers are 0.35 m2 / V's1 and 0.12 m2 / V's' respectively. Compute electron and hole concentrations at room temperature.
- QA: Pure silicon has carrier ch arge density 10 cm. The mopility of un = 4000cm² (Vs), and µp = 2000cm² (Vs)1 A- Find the conductiviry in pure silicon. choice answer (i – 0.96 S cm ii- 0.22 S cm B- Find resistivity. chooce answer (i– 4.52cm ü- 1.042cm iii– 20.32cm). -1 iii – 0.05 S cm).What mass of phosphorus is needed to dope 1.0 g of silicon so that the number density of conduction electrons in the silicon is increased by a multiply factor of 106 from the 10^16 m-3 in pure silicon.Question-5. A semiconductor has an electrical conductivity of 20 (N-m)', whereas the electron and hole mobilities are 0.04 and 0.03 m2/V-s, respectively. The density of the semiconductor is 4.62 g/cm³. The electrical charge of an electron (e) is 1.6 ×10-19 C. The atomic weight of the semiconductor is 59.72 g/mol. Avogadro constant (NA) is 6.023 × 1023 atoms/mol. (a) Compute the intrinsic carrier concentration for the semiconductor at room temperature (25 °C). (b) Compute the number of free electrons per atom for the intrinsic semiconductor at room temperature.
- In the fabrication of a p-type semiconductor, elemental boron is diffused a small distance into a solid crystalline silicon wafer. The boron concentration within the solid silicon determines semiconducting properties of the material. A physical vapor deposition process keeps the concentration of elemental boron at the surface of the wafer equal to 5.0 x 1020 atoms boron/cm3 silicon. In the manufacture of a transistor, it is desired to produce a thin film of silicon doped to a boron concentration of at least 1.7 x 1019 atoms boron/cm3 silicon at a depth of 0.20 microns (µm) from the surface of the silicon wafer. It is desired to achieve this target within a 30-min processing time. The density of solid silicon can be stated as 5.0 x 1022 atoms Si/ cm3 solid. (a) At what temperature must the boron-doping process be operated? It is known that the temperature dependence of the diffusion coefficient of boron (A) in silicon (B) is given by Where Do=0.019 cm2/s and Qo=2.74 x 105…The hole concentration in silicon at 300 K varies linearly from x=0 to x=0.01 cm. The hole diffusion coefficient is Dp= 10 cm2/sec, the hole diffusion current density is Jdif = 20 A/cm2, and the hole concentration at x=0 is 4x1017 cm-3. Determine the hole concentration at x=0.01 cm.In solid KCI the smallest distance between the centers of a. potassium ion and a chloride ion is 314 pm. Calculate the length of the edge of the unit cell and the density of KCI, assuming it has the same structure as sodium chloride.
- The figure shows the pn junction 250 micrometers long and made of silicon with a surface area of 100 micrometers square. In this pn junction, the I region is doped with 10 ^ 19 cm ^ -3 and in the II: region with 10 ^ 17 cm ^ -3 atoms. Only when the S1 switch is closed, the maximum is drawn from the "a-b" ends and 250 mA flows from the circuit. The ability of electrons to move in the pn junction is 1200 cm ^ 2 / V.s, and the ability of the holes to move is 400 cm ^ 2 / V.s. What is the channel width accordingly? (W =?)A silicon p-n junction diode has the following parameters: ND = 1022 m-³, NA = 5x1024 m-3, n = 0.05 m²/V.s, Hp = 0.02 m² /V.s, T₁=Tp=1μs, A=1mm². Obtain the applied voltage at a forward current of 1 mA at 300 °K. Assume n₁ = 1.5×10¹6 m-³3.An abrupt silicon pn junction at zero bias has dopant concentrations of Nd = 5 X 1017 cm 3 and N₂ = 1 X 1017 cm-3 at T = a 300K. Determine the peak electric field for this junction for a reverse voltage of 5 V. Emax = O Emax O Emax 3.88 X 105 V/cm Emax 3.21 X 105 V/cm Emax = 1.70 X 105 V/cm 1.35 X 105 V/cm =