Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi energy is 0.25 eV above the valence band energy. The value of N-1.04x1019 cm-3 at T=300K.
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A: Given-Eg=1.1 eVNC=2.8×1019cm-3=2.8×1025 m-3Nv=1×1019cm-3=1×1025 m-3n0=1011 cm-3=1017m-3…
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Q: Calculate the thermal-equilibrium hole concentration (cm-3) in Silicon at T=375 k. Assume the Fermi…
A: According to question --- Given data-- T = 375 K. fermi energy E f = 0.25 eV above the valence band…
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- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?constant = 1. If 1 × 1015 boron atoms per cm³ are uniformly added to silicon (diamond structure, lattice 0.543 nm) as a substitutional impurity, determine what percentage of the silicon atoms are displaced in the single crystal lattice, i.e., the concentration of boron as an impurity in silicon.silicon has electron concentration, no = 3x1016 cm3 and n; =1.5 x 1010 cm-3; at T=350 K. (a) Determine Po. (b) Is this material n or p type? (c) Determine E-EF.
- Problem 5. Assume that at T=300 K, the electron mobility in a silicon sample is 1300 cm²/Vs. If an electric field of 100 V/cm is applied what is the excess energy of the electrons? How does this excess energy compare with the thermal energy? If you assume that the mobility is unchanged how does the same comparison work out at a field of 5 V/cm. (NOTE: Excess energy is equal to ½ m₂* v² where Va is the drift velocity.)1. A p-type silicon sample with the geometry shown in Figure 5 has parameters L= 0.2 cm, W= 102 cm, and d 8 104 cm. The semiconductor parameters are p = 1016 cm3 and u,= 320 cm2/V-s. For Vx = 10 V and Bz 500 gauss= 5 x 102 tesla, determine I, and VH . 2. The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of u = 1300 cm?/V-s and a hole mobility of u, = 450 cm2/V-s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material? 3. Germanium is doped with 5 x1015 donor atoms per cm3 at T = 300 K. The dimensions of the Hall device are d 5 x 10-3 cm, W= 2 x 102 cm, and L= 10- cm. The current is I, =250 µA, the applied voltage is Vx= 100 mV, and the magnetic fluxdensity is Bz= 500 gauss= 5 x102 tesla. Calculate: (a) the Hall voltage, (b) the Hall field, and (c) the carrier mobilityX. Determine the resistivity of a germanium crystal at 300 K that has the simultaneous presence of (i) donor impurity of 1 in 10' and (ii) acceptor impurity of 1 in 10%. Given data: Atomic concentration in Germanium is 4.4 x 1022 atoms/cm³, n₁ = 2.5 × 10¹3 /cm³, He = 3800 cm² /Vs and h= 180 cm² /V s.
- 1. A silicon pn junction at T = 300 K has doping concentrations of Na = 5 x 10¹5 cm-³ and Na = 5 x 10¹6 cm ³. n₁ = 1.5 x 10¹0 cm ³. &, = 11.7. A reverse-biased voltage of VR = 4 V is applied. Determine (a) Built-in potential Vbi (b) Depletion width Wdep (c) Xn and Xp (d) The maximum electric field Emax N-type Na 0 P-type NaA:08 الرسائل المحفو. . . 1 03: Rhenium has a Hexagonal Close-Packed crystal structure with an atomic radius of 0.137 nm and a ratio c/a of 1.615, compute: a) The volume of the unit cell. b) The theoretical density c) Atomic packing factor Note: Avogadro's' number = 6.023×10²³ Atomic weight = 186.21 g/mol إضافة وصف.. . IIILead has Tc = 7.19 K and Hc = 63 901 A m-1. At what temperature does lead become superconducting in a magnetic field for 20 kA m-1?
- chapter 4.PNG → Problems Ql: A bar of intrinsic silicon having a cross section area of 3x104 m² has an n=1.5x1016m3. If µ=0.14 m2/V.s and u,-0.05 m2/V.s. Find the long of the bar if the current is 1.2mA and the applied voltage is 9V. (Ans: 1.026mm) Q2: Calculate the thermal equilibrium electron and hole concentration in silicon at T=300K for the case when the Fermi energy level is 0.22 eV below the conduction band energy. Eg= 1.12 eV. The values of Ne and N, are 2.8x1025/m³ and 1.04x1025/m', respectively. (Ans: n=5.73x102²/m², p-8.43x10%m³) Q3: Find the intrinsic carrier concentration in silicon at (a) T=200K, (b) T=400K. The values of Ne and N, are 2.8x1025/m and 1.04x1025/m', respectively. (Ans: (a) 7.68x1010/m², (b) 2.38×1018/m³) Q4: Determine the position of the intrinsic Fermi level with respect to the center of the bandgap in GaAs at T=300K. mn=0.067 mo, m,=0.48 mo (Ans: -38.2meV) IIFind the resistivity of p-type silicon with NA = 10^15/cm3 at T-300K. Assume that for intrinsic silicon un = 1350 cm2/Vs and up = 480 cm2/V.a, and for the doped silicon un = 1100 cm2/Vs and up = 350 cm2/Vs. O 17.86 Q cm 17.86 0 13.02 Q.cm 5.68 Q cm %3D 0000e l::00 %7 L& A ... Exercises of optical properties.pdf X Exercises Ex1 Salt (NaCl) absorbs very strongly at infrared wavelengths in the re- strahlen band. The complex dielectric constant at 60um is given by ɛ, =25+i33. Calculate the absorption coefficient and reflectivity at this wavelength. Ex2 The reflectivity of silicon at 560nm is 76% and the absorption coefficient is 5.6*10'm1. Calculate the transmission and optical density of a sample with a thickness of 250nm.