are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes.

Modern Physics
3rd Edition
ISBN:9781111794378
Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer
Chapter12: The Solid State
Section: Chapter Questions
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are made of Au with a work function of 5.1 eV. The electron affinity, Fermi
energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and
1.2 eV, respectively. If the source and drain electrodes are electrically connected
with a zero potential difference, sketch the energy band diagram under a positive,
zero and negative gate voltage, respectively, with respect to the source and drain
electrodes.
Amorphous
semiconductor
thin film
Source
Drain
SiO,
Gate
Transcribed Image Text:are made of Au with a work function of 5.1 eV. The electron affinity, Fermi energy and band gap for the amorphous semiconductor are 4.1 eV, 4.6 eV and 1.2 eV, respectively. If the source and drain electrodes are electrically connected with a zero potential difference, sketch the energy band diagram under a positive, zero and negative gate voltage, respectively, with respect to the source and drain electrodes. Amorphous semiconductor thin film Source Drain SiO, Gate
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