Physics for Scientists and Engineers
Physics for Scientists and Engineers
6th Edition
ISBN: 9781429281843
Author: Tipler
Publisher: MAC HIGHER
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Chapter 38, Problem 6P
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In an unbiased p-n junction, holes diffuse from the p-region to n-region because(a) free electrons in the n-region attract them.(b) they move across the junction by the potential difference.(c) hole concentration in p-region is more as compared to n-region.(d) All the above
(e) Intrinsic silicon has effective densities of states in the conduction band and the valence band of 3.2 × 10¹⁹ cm−³ and 1.8 × 10¹⁹ cm-³, respectively. If the band gap is 1.12 eV, what is the concentration of intrinsic charge carriers in silicon at 300 K? A. 9.46 x 10⁹ m-³ 9.46 x 10⁹ cm-³ 0 m-3 2.40 x 1019 cm-3 B. C. D.
Assume a temperature of 300 K and fi nd the wavelength of the photon necessary to cause an electron to jump from the valence to the conduction band in (a) germanium, (b) silicon, (c) InAs, and (d) ZnS.
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