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The resistance (R) of an NTC thermistor varies with temperature according to R =R*exp(B/T). Calculate the critical maintained voltage drop across the thermistor above which thermal runaway would occur for an ambient temperature of (i) 300K and (ii) 360 K. The thermistor characteristics are as follows: R = 4.5 x 10³2, B= 3000 K; 1/kth = 3.3 x 10-² WK-¹.

The resistance (R) of an NTC thermistor varies with temperature according to R =R*exp(B/T). Calculate the critical maintained voltage drop across the thermistor above which thermal runaway would occur for an ambient temperature of (i) 300K and (ii) 360 K. The thermistor characteristics are as follows: R = 4.5 x 10³2, B= 3000 K; 1/kth = 3.3 x 10-² WK-¹.

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
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Element III-V IV-IV II-VI Material C (diamond) Ge Si Sn (gray) GaAs InAs InSb GaP GaN InN InP x-Sic ZnO n-type Cd Se ZnS PbS IV-VI "Longitudinal effective mass. Transverse effective mass. Light-hole effective mass. "Heavy-hole effective mass. Transition I I PARALDDD I I D D D I Gap energy E₂[eV] 0K 300 K 5.48 5.47 0.74 0.66 1.17 0.09 1.52 0.42 0.23 2.34 3.50 1.42 3.03 3.42 1.85 3.84 0.28 1.12 Room-temp. conductivity 0.17 2.26 3.36 0.7 1.35 2.99 3.35 1.70 3.68 0.41 22-m 10-12 2.2 9 x 10-4 0.08 1.42 0.36 10* 10 10-6 Transitions: D = direct I = indirect Mobility of electrons [m² He 0.18 0.39 0.15 0.14 0.85 3.30 8.00 0.01 0.04 0.46 0.04 0.02 0.08 0.02 0.06 Mobility of holes m² 0.12 0.19 0.045 0.12 0.04 0.046 0.125 0.007 0.01 0.015 0.005 0.018 0.0005 0.07 Work function (photoelectric) o [cv] 4.8 4.6 3.6 4.9 5.3 Effective mass ratio at 4 K m² mo 0.2 1.64* 0.08 0.98* 0.19b 0.067 0.023 0.014 0.82 0.19 m mo 0.25 0.04€ 0.28 0.16 0.49d 0.3⁰ 0.082 0.40 0.40 0.60 0.60 0.077 0.60 0.27 0.13 0.45 0.40 0.25 0.64 1.00 0.25
Transcribed Image Text:Element III-V IV-IV II-VI Material C (diamond) Ge Si Sn (gray) GaAs InAs InSb GaP GaN InN InP x-Sic ZnO n-type Cd Se ZnS PbS IV-VI "Longitudinal effective mass. Transverse effective mass. Light-hole effective mass. "Heavy-hole effective mass. Transition I I PARALDDD I I D D D I Gap energy E₂[eV] 0K 300 K 5.48 5.47 0.74 0.66 1.17 0.09 1.52 0.42 0.23 2.34 3.50 1.42 3.03 3.42 1.85 3.84 0.28 1.12 Room-temp. conductivity 0.17 2.26 3.36 0.7 1.35 2.99 3.35 1.70 3.68 0.41 22-m 10-12 2.2 9 x 10-4 0.08 1.42 0.36 10* 10 10-6 Transitions: D = direct I = indirect Mobility of electrons [m² He 0.18 0.39 0.15 0.14 0.85 3.30 8.00 0.01 0.04 0.46 0.04 0.02 0.08 0.02 0.06 Mobility of holes m² 0.12 0.19 0.045 0.12 0.04 0.046 0.125 0.007 0.01 0.015 0.005 0.018 0.0005 0.07 Work function (photoelectric) o [cv] 4.8 4.6 3.6 4.9 5.3 Effective mass ratio at 4 K m² mo 0.2 1.64* 0.08 0.98* 0.19b 0.067 0.023 0.014 0.82 0.19 m mo 0.25 0.04€ 0.28 0.16 0.49d 0.3⁰ 0.082 0.40 0.40 0.60 0.60 0.077 0.60 0.27 0.13 0.45 0.40 0.25 0.64 1.00 0.25
The resistance (R) of an NTC thermistor varies with temperature according to R =R*exp(B/T). Calculate the critical maintained voltage drop across the thermistor above which thermal runaway would occur for an ambient temperature of (i) 300K and (ii) 360 K. The thermistor characteristics are as follows: R = 4.5 x 10³2, B= 3000 K; 1/kth = 3.3 x 10¹² WK-¹.
Transcribed Image Text:The resistance (R) of an NTC thermistor varies with temperature according to R =R*exp(B/T). Calculate the critical maintained voltage drop across the thermistor above which thermal runaway would occur for an ambient temperature of (i) 300K and (ii) 360 K. The thermistor characteristics are as follows: R = 4.5 x 10³2, B= 3000 K; 1/kth = 3.3 x 10¹² WK-¹.
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