The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 x 1016 cm-³ and electronic charge q = 1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm², is Drift velocity (cm/s) 10 0 linear constant 5x105 Electric field (V/cm)

The dependence of drift velocity of electrons on electric field in a semiconductor is shown below. The semiconductor has a uniform electron concentration of n = 1 x 1016 cm-³ and electronic charge q = 1.6 × 10-19 C. If a bias of 5 V is applied across a 1 µm region of this semiconductor, the resulting current density in this region, in kA/cm², is Drift velocity (cm/s) 10 0 linear constant 5x105 Electric field (V/cm)

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 14RQ

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