the dependency between elecron density and fermi energy for 2-Dfree electron gas is
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the dependency between elecron density and fermi energy for 2-Dfree electron gas is
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- Using drawing and Explanation. Effect of light: What will happen if you shine a light on three parts of the p-n junction. Show the effect of light separately on p-si, n-si, and depletion regions. ww.What is the probability that an electron in a metal will occupy the Fermi level at anu temperature(A diode conducts 1mA at 20°C. If it is operated at 100°C, what will be the current? Given data: n=1.74 and NTC value = 2.2mV/°C.
- A diode with a voltage drop in the forward direction of 0.7V at 1.0mA and n = 1, what is the value of the current if it operates at 0.5V?Explain why electrons move from N region to P region going to the positive terminal of theSilicon is doped with a boron concentration of 4×1018/cm3. Is boron a donor or acceptor impurity? Find the electron and hole concentrations at 300 K. Is this material n-type or p-type? Find the electron and hole mobilities. What is the resistivity of the material?
- Determine the diffusion capacitance due to holes in a Ge diode when forward bias current is I=26mA.given the mean life time of hole is 20uS at T-300KFor what voltage will the reverse current in a p-n junction Germanium diode reach 90% of its saturation value at room temperature of 27°C.1 (b) When Ef touches intrinsic Fermi energy Eri, comment on whether an extrinsic semiconductor will stay extrinsic or not. What will be ultimate state of semiconductor in this case?
- A Germanium diode displays a forward voltage of 0.25V at 10mA current at room temperature. Find the reverse saturation current. Given : = 0.25V ID 10 mA Te = 27°C TK = (273 + 27) k TK = 300 'K Is = ?Explain the exponential relationship between the charge on capacitor and time during charging or discharign with the use of natural logConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?