Please solve Problem 3. The following two questions relate to residual stress.(1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in anoxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K?, Esio2 = 50 GPa.%3D0.24) layer on a 525 um(2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v =thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from themeasurement system is 80 um downwards. Estimate the stress in the film, and indicate whethertensile or compressive.%3D80 μm1 μm NitrideSi Wafer

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Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K1, Esio2 = 50 GPa. (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = 0.24) layer on a 525 µm thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 µm 1 um Nitride Si Wafer

Problem 3. The following two questions relate to residual stress. (1) Explain why thermally grown oxide is compressive, and estimate the stress (at room temp.) in an oxide layer grown at 1025°C. Hint: asi = 2.3 x 106 K1, asio2 = 0.5 x 106 K1, Esio2 = 50 GPa. (2) Assume you just deposited a 1 um PECVD nitride (E = 210 GPa, v = 0.24) layer on a 525 µm thick, 125 mm diameter Si wafer (assume E = 166 GPa, v = 0.24). The center deflection from the measurement system is 80 um downwards. Estimate the stress in the film, and indicate whether tensile or compressive. %3D 80 µm 1 um Nitride Si Wafer

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

ChapterMA: Math Assessment

Section: Chapter Questions

Problem 1.1MA

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