Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vtn-0.25V, un-560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up-240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vdd) is 1.25 volts.

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Problem 3
Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has
the following characteristics. The channel length is 350 nanometers.
For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm
For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm
Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.
Transcribed Image Text:Problem 3 Consider a CMOS static inverter. Please be careful with units. The NMOS transistor has the following characteristics. The channel length is 350 nanometers. For NMOS: tox=10nm, Vm=0.25V, un=560cm²/vsec, W=700nm, L=350nm For PMOS: tox=10nm, Vtp=-0.35V, up=240cm²/vsec, W=700nm, L=350nm Compute the resistance R₁ for NMOS if the power supply voltage (Vad) is 1.25 volts.
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