A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 um thick (or thin) wafers. After cutting, the cells are put into a diffusion furnace and heated to 850°C. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K. 1. What is the resistance measured across the 500μm thickness after doping? Use u₂ = 1200 cm² V/s and up = 400 cm² V/s for extrinsic silicon. 2. If 2V were put across the thickness of the doped silicon ingot, how much is the total drift current density?

A solar cell manufacturing company produces pure silicon ingots using the Czochralski process. The ingot's diameter is 15cm and the ingots are cut into 500 um thick (or thin) wafers. After cutting, the cells are put into a diffusion furnace and heated to 850°C. Boron gas is used to dope the silicon wafer to a dopant concentration of 1016/cm³. After letting the sample cooldown to 300K. 1. What is the resistance measured across the 500μm thickness after doping? Use u₂ = 1200 cm² V/s and up = 400 cm² V/s for extrinsic silicon. 2. If 2V were put across the thickness of the doped silicon ingot, how much is the total drift current density?

Electricity for Refrigeration, Heating, and Air Conditioning (MindTap Course List)

10th Edition

ISBN:9781337399128

Author:Russell E. Smith

Publisher:Russell E. Smith

Chapter12: Electronic Control Devices

Section: Chapter Questions

Problem 3RQ: Diodes and rectifiers allow current to _________. flow in one direction only flow in both...

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