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- The measured density of a KCl crystal is 1.984 g/cm3. What is the equilibrium separation distance of K+ and Cl- ions?The figure shows the pn junction 250 micrometers long and made of silicon with a surface area of 100 micrometers square. In this pn junction, the I region is doped with 10 ^ 19 cm ^ -3 and in the II: region with 10 ^ 17 cm ^ -3 atoms. Only when the S1 switch is closed, the maximum is drawn from the "a-b" ends and 250 mA flows from the circuit. The ability of electrons to move in the pn junction is 1200 cm ^ 2 / V.s, and the ability of the holes to move is 400 cm ^ 2 / V.s. What is the channel width accordingly? (W =?)The bond length in F2 is 1.417 Å, instead of twice theatomic radius of F, which is 1.28 Å. What can account forthe unexpected length of the F_ F bond?
- CV below shows the electrochemical behaviour of Species A that undergoes EC reaction at the electrode-electrolyte interface. Explain the electrochemical behaviour. The scan rates are A= 500mV/s, B= 250 mV/S and C= 100 mV/S. -0.80 -0.60 -0.40 -0.20 0.1 0.2 0.3 0.4 0.5 0.00 B 0.20 Potential, V 0.40 Current, µAPure silicon is used as a photon detector. An incoming photon can strike the surface and excite electrons from the valence band to the conduction band, where they can be counted. (a) Compute the number of electrons you would expect to count if a silicon detector is struck with a 1.04-MeV gamma ray produced in the decay of a 136Cs nucleus. (b) Explain why the counting of electrons should be more precise if the detector is cooled well below room temperature.1) A Si p-n-p transistor has the following properties at room temperature: Tn = Tp 0.1 us NE 1019 сті Emitter concentration — 10 ст2/s -3 Dn = Dp NB 3D 1016 ст Base concentration Nc 1019 ст -3 = Collector concentration WE 3 µm Emitter width W 1.5 um Metallurgical base width, i.e. the distance between base-emitter junction and base-collector junction A = 10-5 cm² = Cross-sectional area If VCB = 0 V and VEB = 0.6 V, calculate the following: ЕВ a) Neutral base width (WB) b) Base transport factor c) Emitter injection efficiency d) a, ß and y. e) Ic, Ig and Ig.
- Pb2+ + 2 e- → Pb (s) ξo = -0.13 VAg+ + 1 e- → Ag (s) ξo = 0.80 VWhat is the voltage, at 298 K, of this voltaic cell starting with the following non-standard concentrations:[Pb2+] (aq) = 0.071 M[Ag+] (aq) = 0.81 M Use the Nernst equation: ξ = ξo - (RT/nF) ln QFirst calculate the value of Q, and enter it into the first answer box. Q is dimensionless.Then calculate ξ, the non-standard cell potential, and enter its value into the second answer box (remember the unit of ξ is Volts). Q = ξ =The gap between valence and conduction bands in silicon is 1.12 eV. A nickel nucleus in an excited state emits a gamma-ray photon with wavelength 9.31 * 10-4 nm. How many electrons can be excited from the top of the valence band to the bottom of the conduction band by the absorption of this gamma ray?An abrupt uniformly doped silicon pn junction is reversed biased by Vg= 20 V. If Na(in n-side)=10" cm, N,(in p-side)=10" cm then the junction capacitance is 20 pF. The junction capacitance if Na(in n-side) increased to 3x10" cm' is equal to ....pF. a) 9 b)21 c)35 d) 52 e) 87
- (b) Describe the nature and origin of various forces existing between the atoms of a crystal. Explain the formation of a stable bond using the potential energy versus interatomic distance curve. Assume that the potential energy of two particles in the field of each other is given by U(R) = - R where A and B are constants. R9 (i) Show that the particles form a stable compound for R= R. = (9B/A)/8 (R, is equilibrium separation) i) Show that for stable configuration, the energy of attraction is nine times the energy of repulsion. 8A (iii) Show that the potential energy of the system under stable configuration is 9ReA Pentium IV microchip has dimensions of 217 mm x 217 mm. Suppose each transistor on the chip is made up of a 10 x10 square of atoms (that is 100 atoms per transistor). How many transistors could fit on the Pentium IV chip if the spacing between the silicon atoms is 0.54 nm?If the bonding energy, in terms of (r), between two ions is ( number. a) Find the repulsive and attractive forces between the two ions. b) If the bonding energy between the two ions at the equilibrium state is given as ny r+1), x and y are constant and n is an integer Find the smallest distance between the two ions to achieve the state of equilibrium. (x1-n \ny, 1-n