The circuit below has the following conditions: a. diodes are Silicon with voltage across each diode (Vd) equal to 0.7 V b. diodes operate at forward bias conditions c. diodes are ideal, therefore these will act as closed switches d. Resistors values are R1=R2= 1906 R3=R4= 119 R5=R6= 2002 D1 D2 R3 R5 Vs R1 R2 5 V R4 R6

The circuit below has the following conditions: a. diodes are Silicon with voltage across each diode (Vd) equal to 0.7 V b. diodes operate at forward bias conditions c. diodes are ideal, therefore these will act as closed switches d. Resistors values are R1=R2= 1906 R3=R4= 119 R5=R6= 2002 D1 D2 R3 R5 Vs R1 R2 5 V R4 R6

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

How is a solid-state diode tested? Explain.
What is the difference between a diode and rectifier?
A diode circuit is given in the below figure, in which two diodes are connected in series and their saturation currents are Is1 =10-¹6 A and Is2 =10-¹4 A. If the applied source voltage is 1 V, calculate the currents IDI and ID2 and the voltage across each diode VDI and VD2. IDI Ī Vpl + D₂ VD2
Let’s look at the Wheatstone bridge where antiparallel diodes are place between nodes A and B. Assume the diodes have the following characteristic:
4. For the circuit shown in the figure below uses a transformer of 230V/12V-0-12V and all diodes are Ge find the following, RL-3.3k2. The name of the circuit is ........ Current through the load is............The DC output voltage is............ Draw the input & output wave forms ✈ ellel eetee CT D₂ DE www R₂
For the circuit shown in the Figure, if the diodes are silicon diodes with VD(on)=0.7 V, and VIn=50 sin wt V, V1 =7 V and V2 =13 V, then the value of VOUT (p-p) is: R1 D, D2 VIN VOUT vi E v2= Ca. 19.4 V Ob. 17.4 V Cc. 15.4 V Cd. 21.4 V
consider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -Ir
Draw vx and v0 according to the input voltages in the circuit shown in the figure. note = R1 = 10Kohm R2 = 1kohm R3 = 1Kohm, the threshold voltages of diodes will be VE = 0.7V.
For the circuit shown in figure 1, the diodes is in complete model and the resistance of both diodes are 5 Ohm. Find the current in the resistance RL. When the both switch S1 and switch S2 are ON. v1= 6V, V3 =3 Vv2=12 V.
In the circuit shown in the figure; A) When RL = 5Kohm and capacitor C is switched on, draw VA and V0 in scale according to input voltage Vs. NOTE = diodes are ideal
Draw the input waveform and output waveform for the circuit given below with proper values marked in the figure. Assume D1 as silicon and D2 as germanium diodes. Input Vpp=20V. V1=5 V and V2=9 V. R www D1 Vin Vout v1 V2 Maximum voltage of output waveform Minimum voltage of output waveform
For the rectifier in the figure below, state the conduction sequence of the diodes for periods t1 to tó. D1 D2 D3 22) tl: D. & D.. 23) t2: D. & D.. 24) t3: D. & D.. 25) t4: D. & D.. D4 D5 D6 26) t5: D. &D. 27) t6: D.AN A & D....... Vm cot t6