6:36Expert Q&ADoneQuestio.Assume that a silicon-based NP diode has the following electrical field distribution.E (0)=1.12x10 Vicm-1, 0.37 x10 cmx,0.73x 10 cma) What is the doping level on the P-side?b) What is the doping level on the N-side?c) If the voltage is zero at x =Xp, then what is the voltage at x -0?

The given figure is shown below, we know that, E(0)=2V0WAND W=xn+xp…

Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)-1.12x10ʻ Viem x 10 " cm 037- מ- *,0.73x 10* cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x-Xp, then what is the voltage at x0?

Questio. Assume that a silicon-based NP diode has the following electrical field distribution. E (0)-1.12x10ʻ Viem x 10 " cm 037- מ- ,0.73x 10 cm a) What is the doping level on the P-side? b) What is the doping level on the N-side? c) If the voltage is zero at x-Xp, then what is the voltage at x0?

Electric Motor Control

10th Edition

ISBN:9781133702818

Author:Herman

Publisher:Herman

Chapter59: Motor Startup And Troubleshooting Basics

Section: Chapter Questions

Problem 12SQ: How is a solid-state diode tested? Explain.

See similar textbooks

Similar questions

How is a solid-state diode tested? Explain.
A silicon diode is in parallel with a germanium diode and is connected to a load resistor having a value of 20 kQ and a forward supply voltage of 10 V. What is the approximate voltage across the silicon diode? * A. 10 V B. 1.0 V C. 0.7 V D. 0.3 V
3: Using silicon diode design a clamper that will produce output V,-20Sin wt+10 (v) when the input voltage is Vo=20Sin wt-10 (V).Draw the circuit diagram and the input and output signals. 4:The 6-V zener diode has a maximum rated power dissipated of 690 mw.Its reveres current must be at least 3mA to keep it in breakdown. Find a suitable value for Rs if V; can vary from 9v to 12v and Ri. can vary from 5000 to 1.2KO.
A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
In a Simplified Diode Model, up to the barrier potential or Vdiode the current through the diode is increasing. Select one: True False
True or False. Please explain. thank you As the temperature increases, the forward voltage decreases in a silicon diode. Then, the graph of the forward bias region will shift to the left.
For the circuit shown in the figure below, consider the diode as an ideal diode & R.M.S value of source voltage as Vs. The output voltage waveform at R is most likely to have zero value in the positive half cycle and a peak value of 1.414Vs in the negative half суcle sine-wave nature with a peak value 1.414VS zero value in the negative half cycle and a O peak value of 1.414Vs in the positive half сycle O sine-wave nature with a peak value Vs
Consider a silicon pn junction diode at T 300K. The reverse saturation current is Is = 10-14 A and the ideality factor n = 1. Determine the diode current for a diode voltage of VD = 0.573 V and use that to determine the DC and AC resistance of the diode. RDC = 14.13 k rac = 639 Q RDC = 234 Q2 = rac=8Q RDC = 7.00 KQ rac = 307 Q RDC = 1.43 kQ rac = 58 Q
consider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -Ir
Q4) Determine and sketch the output voltage across the load resistor (RL) for the circuit shown below. (assume Si diodes) V_DC 0.75 0.25 V_SIN Y SIN as RL -1 v SOR V_SQR 0.75 -0.75 V_TRI V TRI as
Find the value of RI in the circuit shown below, assume Ipz is twice Ipi. The diodes have constant voltage drop of 0.7v for silicone and 0.3v for germanium
Estimate the forward bias voltage of P-N diode, if a forward current of 9.75MA is flowing through the diode at 25.5°C room temperature with the reverse current of 3nA. Assume n=1. a. 0.316V b. 0.386 V c. 0.374V d. 0.392V