Q3: An-type semiconductor crystal with 12 mm long ,5mm wide andImm thick has magnetic density of 0.5 wb/m² applied perpendicular onthe semiconductor , when current of 20 m A flows length wise through itthe hall coefficient is 3.7 ×10 “ m/c1-find concentration of electrons2-Hall voltage3- Mobility of electrons if the conductivity is 112/QmQ4: the intrinsic carrier density at room temperature in Ge is 2.37×10" m3 if the electron and hole mobility are 0.38 and 0.18 m²/v.sec respectively

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Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m? applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 x10 6 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/2m

Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m? applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it the hall coefficient is 3.7 x10 6 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/2m

Modern Physics

3rd Edition

ISBN:9781111794378

Author:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Publisher:Raymond A. Serway, Clement J. Moses, Curt A. Moyer

Chapter12: The Solid State

Section: Chapter Questions

Problem 12P

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Q3: An-type semiconductor crystal with 12 mm long ,5mm wide and Imm thick has magnetic density of 0.5 wb/m' applied perpendicular on the semiconductor , when current of 20 m A flows length wise through it „the hall coefficient is 3.7 x10 m/c 1-find concentration of electrons 2-Hall voltage 3- Mobility of electrons if the conductivity is 112/Qm
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