Q. 3] A photodiode is made with p-type Si doped with 1023 boron atoms/m and n- type Si phosphorus with 1022 As atoms/m. The width of the p-side is 1 um. For Si, the dielectric constant K = 12. The intrinsic carrier concentration of Si at 300 K is given by nį 1.4 x 1016. The index of refraction of Si is 3.5 and the absorption coefficient is a = 10°m-1. Calculate the quantum efficiency of the photodiode at 300 K.

Q. 3] A photodiode is made with p-type Si doped with 1023 boron atoms/m and n- type Si phosphorus with 1022 As atoms/m. The width of the p-side is 1 um. For Si, the dielectric constant K = 12. The intrinsic carrier concentration of Si at 300 K is given by nį 1.4 x 1016. The index of refraction of Si is 3.5 and the absorption coefficient is a = 10°m-1. Calculate the quantum efficiency of the photodiode at 300 K.

College Physics

11th Edition

ISBN:9781305952300

Author:Raymond A. Serway, Chris Vuille

Publisher:Raymond A. Serway, Chris Vuille

Chapter22: Reflection And Refraction Of Light

Section: Chapter Questions

Problem 2P

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