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Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is = 1,[1-exp(-ad)] dhy b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the

Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is = 1,[1-exp(-ad)] dhy b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the

Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
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4a and 4b) please help with parts A and B only. Thank you!
Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 1 ph 1,[1-exp(-ad)] dhv b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the
Transcribed Image Text:Problem 4) - a) If d is the thickness of a photodetector material, Io is the intensity of the incoming radiation, show that the number of photons absorbed per unit volume of sample is 1 ph 1,[1-exp(-ad)] dhv b) What is the thickness of a Ge and In0.53Ga0.47As crystal layer that is needed for absorbing 90% of the incident radiation at 1.5 μm? c) Suppose that each absorbed photon liberates one electron (or electron hole pair) in a unity quantum efficiency photodetector and that the photogenerated electrons are immediately collected. Thus, the
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