Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in itat a temperature of 1100°C. If the surface concentration of the phosphorus is 1 × 1018 atoms/cm³and its concentration at 1 um is 1 × 1015 atoms/cm, how long must be the diffusion time? D =3.0 x 10-13 cm²/s for P diffusing in Si at 1100°C.

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Answered: Problem 3. Phosphorus is diffused into…

Elements Of Electromagnetics

7th Edition

ISBN:9780190698614

Author:Sadiku, Matthew N. O.

Publisher:Sadiku, Matthew N. O.

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Problem 3. Phosphorus is diffused into a thick slice of silicon with no previous phosphorus in it at a temperature of 1100°C. If the surface concentration of the phosphorus is 1 x 10 atoms/cm and its concentration at 1 µm is 1 x 105 atoms/cm, how long must be the diffusion time? D = 3.0 x 10 cm?/s for P diffusing in Si at 1100°C.
The activation energy for the diffusion of atomic species A in metal B is 103 kJ/mol. Calculate the diffusion coefficient at 842°C, given that the value of D at 1150°C is 6.5 x 10-12 m²/s. i m²/s
Vacancy diffusion vs interstitial diffusion (when they can happen?)
Consider a 2-mm-thick silicon (Si) wafer to be doped using antimony (Sb). Assume that the dopant source (gas mixture of antimony chloride and other gases) provides a constant concentration of 1022 atoms/m3. We need a dopant profile such that the concentration of Sb at a depth of 1 micrometer is 5 x 1021 atoms/m3. What is the required time for the diffusion heat treatment? Assume that the silicon wafer initially contains no impurities or dopants. Assume that the activation energy for diffusion of Sb in silicon is 380 kJ/mole and D0 for Sb diffusion in Si is 1.3 x 10-3 m2/s. Assume T = 1250°C.
Aluminum atoms are to be diffused into a silicon wafer using both predeposition and drive-in heat treatments; the background concentration of Al in this silicon material is known to be 3.5 × 101⁹ atoms/m³. The drive-in diffusion treatment is to be carried out at 1050°C for a period of 4.0 h, which gives a junction depth x; of 3.0 µm. Compute the predeposition diffusion time at 950°C if the surface concentration is maintained at a constant level of 2 x 1025 atoms/m³. For the diffusion of Al in Si, values of Qd and Do are 3.41 eV and 1.38 × 10-4 m²/s, respectively.
Compare interstitial and vacancy atomic mechanisms for diffusion and cite two reasons why interstitial diffusion is normally more rapid than vacancy diffusion.
What are the differences between Equimolar counter diffusion (EMD) and Uni molecular diffusion
In copper, what percentage of the volume change which occurs as the specimen is heated from room temperature to its melting point is due to the increased vacancy concentration, assuming that the vacancy concentration is just below the melting point (1083 oC) is 10-4. Given: Assume that the linear thermal expansion coefficient of copper is 16.5×10-6 K-1 over the whole temperature range.
Answer in a brief and concise essay. 1. Why does diffusion in solids important?
DISCUSSION THEORY OF DISFFUSION AND THROUGLY EXPLAIN FIVE DIFFUSION QUANTITIES.ALSO EXPLAIN THE DIFFUSION AND HEAT TRANSFER. PLEASE GIVE 2-3 PAGE DETAILED ESSAY.
why diffusion coefficient of caarbon inBCC and FCC iron at temperature 912 is different?
Diffusion of carbon into the surface of BCC steel at 600oC for 10 hours results in a carbon concentration of 0.2wt% at a depth of 1.5 mm below the surface. At what depth will the same concentration be obtained if the diffusion time is increased to 20 hours, leaving the temperature at 600o

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