Following the two-level decoder for DRAM, for a 64M x 1 DRAM, what would the the bit-width of he address line? O 11 21?
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- Homework: Show how a 32Kbyte ROM module can be connected on an 8088 system using 2764 EPROM chips, occupying the address range starting from the address E0000H. Use the following address decoding circuits: Nand decoding circuits A line decoder and a Nand gate PLD decoding circuit Comparators only Line decoder and a comparator 1 Solution: A19 A18 A17 A16 A15 A14 A13 A12 A1... A. Memory Map Size of 2764 EPROM chips: Number of chips needed: Number of address lines: 66 23452. Suppose that we are given 32KB SRAM ICs and 8KB ROM ICs. We want to construct the address range for RAM to be from 00000H to 3FFFFH, and from 80000H to 8FFFFH. We also want to construct the address range for ROM to be from FC000H to FFFFFH. Show a possible address decoding circuit.The question is how many address bits are required for 1024K words.
- Suppose a DRAM memory has 4 K rows in its array of bit cells, its refreshing period is 64 ms and 4 clock cycles are needed to access each row. What is the time needed to refresh the memory if clock rate is 133 MHz? What fraction of the memory's time is spent performing refreshes?A 74LS139 2-to-4 code is used to partition the memory space of an MC68008 into 4 quadrant, ROM, RAM, PER (for Synchronous devices) and the 4th is reserved for future provision. Write the address range of the RAM. And compute the addresses per location in ROM if is 64 KBFor a 512k x 32 memory system, what is the data width at each address location? 19 32 512k 16M
- In a dynamic random access memory (DRAM) computer chip, each memory cell chiefly consists of a capacitor for charge storage. Each of these cells represents a single binary-bit value of 1 when its 35-fFfcapacitor (1fF=10^−15F) is charged at 1.5 V, or 0 when uncharged at 0 V. A)When it is fully charged, how many excess electrons are on a cell capacitor's negative plate? B) After charge has been placed on a cell capacitor's plate, it slowly "leaks" off (through a variety of mechanisms) at a constant rate of 0.30 fC/s. How long does it take for the potential difference across this capacitor to decrease by 1.0% from its fully charged value? (Because of this leakage effect, the charge on a DRAM capacitor is "refreshed" many times per second.) Express your answer to two significant figures and include the appropriate units.6- In 8086Mp bus cycles, the signal (ALE) becomes '1' during clock cycle. 7- The type of the buffer used for buffering data lines is while the type of the buffer used for buffering address lines is 8- During transferring a data of 8-bits from 8086Mp to memory address (1F871H), give the logic value of the following signals: M/IO= RD= = WR= BHE= 9- The benefit of multiplexing operation is 1. CCWith your knowledge in memory addressing mods and using the given opcodesSTCH = OX54Buffer = 1000 0101 0100(00) 1(x) 011 0000 0000 0000() What will be the target address?
- Assume that the base address of the 8255-PPI chip is 0C00H and the address of port C of the chip is 0C04H, which address lines are generating the selection line A1 A0? A. None B. Selection lines A1 A0 from address lines A2 A0 C. Selection lines A1 A0 from address lines A2 A1 D. Selection lines A1 A0 from address lines A3 A2 E. Selection lines A1 A0 from address lines A1 A0To address 1KB, 2KB, 4KB, 1MB, 1GB, and 4GB of RAM, how many bit addresses are required? How many bits are needed to address 512MB and 3GB of RAM? In hexadecimal, what is the binary address 1111111110?Calculate the number of entries in page table for a virtual memory of MIPS with 20 KB page size.