A junction is made between p* Si with doping density NA1 = 1015 cm-3 and p Si with doping density NA2 = 10¹7 cm ³. Given: Boltzmann constant k = 1.38 × 10-2³ J.K-¹, electronic charge q = 1.6 × 10-¹⁹ C. Assume 100% acceptor ionization. At room temperature (T = 300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be

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A junction is made between p* Si with doping
density NA1 = 1015 cm-3 and p Si with doping
density NA2 = 10¹7 cm ³.
Given: Boltzmann constant k = 1.38 × 10-2³ J.K-¹,
electronic charge q = 1.6 × 10-¹⁹ C. Assume 100%
acceptor ionization.
At room temperature (T = 300K), the magnitude of
the built-in potential (in volts, correct to two
decimal places) across this junction will be
Transcribed Image Text:A junction is made between p* Si with doping density NA1 = 1015 cm-3 and p Si with doping density NA2 = 10¹7 cm ³. Given: Boltzmann constant k = 1.38 × 10-2³ J.K-¹, electronic charge q = 1.6 × 10-¹⁹ C. Assume 100% acceptor ionization. At room temperature (T = 300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be
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