Design the doping concentration and bias point of a pn diode on Si at 300 K, assuming the area of the diode is 5 mm². (a) For a built-in potential of 0.78 V, determine NA if ND= 5×10¹7 cm³. (b) If the doping concentration of N₁ increase by 10× and 100× respectively, determine the change in the built-in potential. (c) Following (a), determine the junction capacitance under a reverse bias of 0, 2.5, and 5 V, respectively. (d) Following (a), determine the bias point of the pn diode to have a forward current of 50 mA. How does the current change if the bias voltage increases by 10%? Assume the saturation current of the diode is 2×10-¹7 A.

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Problem 12SQ: How is a solid-state diode tested? Explain.
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Design the doping concentration and bias point of a pn diode on Si at 300 K,
assuming the area of the diode is 5 mm².
(a) For a built-in potential of 0.78 V, determine NA if ND= 5×10¹7 cm³.
(b) If the doping concentration of NA increase by 10× and 100× respectively,
determine the change in the built-in potential.
(c) Following (a), determine the junction capacitance under a reverse bias of 0, 2.5,
and 5 V, respectively.
(d) Following (a), determine the bias point of the pn diode to have a forward current of
50 mA. How does the current change if the bias voltage increases by 10%?
Assume the saturation current of the diode is 2×10-¹7 A.
Transcribed Image Text:Design the doping concentration and bias point of a pn diode on Si at 300 K, assuming the area of the diode is 5 mm². (a) For a built-in potential of 0.78 V, determine NA if ND= 5×10¹7 cm³. (b) If the doping concentration of NA increase by 10× and 100× respectively, determine the change in the built-in potential. (c) Following (a), determine the junction capacitance under a reverse bias of 0, 2.5, and 5 V, respectively. (d) Following (a), determine the bias point of the pn diode to have a forward current of 50 mA. How does the current change if the bias voltage increases by 10%? Assume the saturation current of the diode is 2×10-¹7 A.
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