a,b,c please Consider an ideal, long-base, silicon abrupt P+N junction diode with uniform crosssection and constant doping on either side of the junction. The diode is made from aheavily doped P-type material and 0.50cm N-type materials in which the minoritycarrier lifetime is10-8 s.Tp==Answer the following questions on the n side of the junction only.(a) Calculate the density of the minority carriers as a function of x (distance from thejunction) when the applied voltage is 0.589 V (which is 23 × kT/q).(b) Find and sketch the majority and minority carrier currents as functions of x(distance from the junction), under the applied bias voltage of part (a).(c) What is the majority carrier diffusion current as a function of x?The purpose of the following questions is to show that the minority drift current is negligible.(d) Use the results of parts (b) and (c) to find the majority carrier drift current, Indrift.Then find electric field 8(x), and finally the minority drift current Jpdrift. Is Jpdrift <<Jpdiff? Sketch Jpdrift and Jpdiff in the same graph.(e) Justify the assumption of n' = p'.

Step 1: Step 2: Step 3: Step 4:

Answered: Consider an ideal, long-base, silicon…

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 A
) State whether the following statements are true or false and then correct the false ones. i. In pn-junction diodes, the reverse saturation current stays constant regardless of the ambient temperature. i Under steady state, the overall charge of the depletion region in a diode equals zero. The peak inverse voltage of a pn-diode decreases with temperature. The reverse recovery time of a diode determines the magnitude of the forward diode current.
A one-sided abrupt silicon p-n junction diode is to be designed to have a breakdown voltage of at least 60 V and to have a forward-bias current of 50 mA for an applied voltage of 0.625 V while still operating under low injection. The minority carrier lifetimes are To = Tno = Tpo = 2 x 10-7 sec. Determine the doping concentrations and the minimum cross-sectional area.
2. Using Shockley's equation determine the diode current at 20° for a silicon diode with I, potential -10V? 0.1microA at a reverse bias
3. A metal contact to a n-type semiconductor can be considered as a p*-n junction with NA > ND. Draw an energy band diagram of the contact showing the Schottky barrier eoz and the depletion width d. Then draw the energy band diagram in forward and reverse biased conditions. Indicate how the +V or -V bias affects the contact potential and the depletion width. Explain how the bias changes the forward current due to the injection of electrons from the semiconductor into the metal, and the reverse current Io from the flow of metal free carriers into the semiconductor. Show that the rectifying behavior is just like that in a p-n junction.
For a germanium diode carrying 10 mA, at a room temperature of 20 degrees centigrade, the required forward bias voltage is about 0.2 V. Match one appropriate estimate to a given description. Forward current (mA) at a bias Choose.. voltage of 0.258 V Bias voltage (V) for 80 mA Choose... + Forward Ac resistance (Ohms) Choose... + Choose.. Reverse saturation current (uA) Choose.. + Bias voltage (V) for 2 mA Choose... +
Consider an idealized diode with a reverse saturation current 0.01 mA and an abrupt turn-on voltage of 0.7 V (assume no breakdown and operation away from the knee of the diode curve). For the circuit shown, both resistors are 100 2, the constant source is Vp = 5 V, and the time-dependent source is V3 = 20 sin(at) V. Calculate (a) the peak positive voltage V and the associated current through the diode and (b) the peak negative voltage V and the associated current through the diode. Rulamting R Vs + > KHI
The diode current in a p-n junction is modeled exponentially (given below.) When the p-n junction is polarized with 0.7V and 0.75V, the currents flowing through the diode are again measured on the basis of 1.36 mA and 7.20 mA. Accordingly, what is the ideality factor? (Note: Take the thermal voltage as mV)
With constant current flowing in the forward direction in a small-signal silicon diode, the voltage across the diode decreases with temperature by about 2 mV/K. Such a diode has a voltage of 0.650 V, with a current of 1 mA at a temperature of 25°C. Find the diode voltage at 1 mA and a temperature of 175°C.
Given the clamper circuit below, assume that the value of R and C are large enough sothe voltage across the capacitor does not change significantly during the interval of time.a. Using the simplified diode model, simulate the action of the circuit when the Silicon diode isin forward and reverse bias condition and measure the corresponding output voltage.b. Draw the complete output waveform of the circuit
Consider the circuit with three diodes and a AC input, as shown below: D2 R1 D1 D3 R2 Assume that the input AC voltage is Ttsin(100TTT). You may consider the diodes to be ideal. mean voltage generated across resistor R2 is (assuming current direction to be from AC so into R1, through diode network, and through R2 from top to bottom): O a. 0.5V Ob. -0.5V O c. 1V O d. OV
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