Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50. bbbbb Light FIGURE 4-50 0 The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0. Assume that the steady-state conditions prevail, the semiconductor is made of silicon, Nd=1018 cm³, = 106 s, and T = 300 K. (a) What is the hole concentration at x=? Explain your answer. (b) What is the hole concentration at x=+oo? Explain your answer. (c) Do low-level injection conditions prevail? Explain your answer. (d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration. (Hint: Solve the continuity equation.)

Consider a piece of infinitely long semiconductor sample shown in Fig. 4-50. bbbbb Light FIGURE 4-50 0 The x>0 portion is illuminated with light. The light generates GL = 1015 electron-hole pairs per cm² per s uniformly throughout the bar in the region x > 0. GL is 0 for x < 0. Assume that the steady-state conditions prevail, the semiconductor is made of silicon, Nd=1018 cm³, = 106 s, and T = 300 K. (a) What is the hole concentration at x=? Explain your answer. (b) What is the hole concentration at x=+oo? Explain your answer. (c) Do low-level injection conditions prevail? Explain your answer. (d) Determine p'(x) for all x, where p'(x) is the excess minority carrier concentration. (Hint: Solve the continuity equation.)

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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