Calculate the substrate parasitic capacitance for a 5 mm long conductor that is 2 mm wide on a 500 mm thick silicon wafer that is 12 inches in diameter.
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- Problem 2 In a P-type semiconductor. the Fermi level is 0.3 cV above the valance band at a room temperature of 30O °K. Determine the new position of the Fermi level for termperatures of (a) 350 K and (b) 400 K. The Fermi level in a P-type material is given byThe applied electric field in p-type silicon is E=10V/cm. The semiconductor conductivity is 1.5(Ω-cm)-1and cross-sectional area is 10-5cm2. Determine the driftcurrent. (b) A drift current density of 120A/cm2is established in n-type silicon with an applied electric field of 18V/cm. If the electron and hole mobilities are µn =1250 cm2/V-s and µp =450 cm2/V-s, respectively, determine the required doping concentration.8. Each of the three insulators forming a string has a self capacitance of C farad The shunt capacitance of each insulator is 02C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: )with the guard ring. (7) without guard ring. 10 95% () 86 13%|
- A silicon diode is in connected to a DC voltage source with Forward biased, the net currentflowing through the diode is (25mA) where the applied voltage across the terminals of thediode is (820mV). Determine diode temperature, if Is "dark saturation current", the diodeleakage current density in the absence of light is 3.4 × 10−10 AConsider a silicon P- N step junction diode with Nd = 1018 cm-3 and Na = 5 × 1015 cm-3 . Assume T=300K. Calculate the capacitance when it is under reverse biased at 1.5V. Assume a cross sectional area of 1um2. If you want to make the capacitance decrease by factor of 3 what should be the width of the depletion layer?The figure given below represents the energy-band diagram in the p-type semiconductor of a MOS capacitor, indicating surface potential as 0.254 V and the space charge width is 0.30 µm. Then the acceptor doping concentration is x 10¹5 cm-3. (Assume Esi = 11.7 &&0 8.85 x 10-14 F/cm). Os = 0.254 V oxide Xd 0.30 μm p-type E Efi EF MM Ev
- A single crystal intrinsic semiconductor is at a temperature of 300K with effective density of states for holes twice that of electrons. The thermal voltage is 26 mV. The intrinsic Fermi level is shifted from mid-bandgap energy level byA pn diode is fabricated by adding a concentration of donor atoms,ND = 4.25 x 10^17 cm–3 into the surface region of a p-type silicon waferwith an acceptor concentration of NA = 1.05 x 10^15 cm–3. Calculate thedepletion capacitance with zero applied bias across the device.The linear electron and hole concentration profiles in a 4 um wide region of silicon material is shown in the figure below. The silicon material is subjected to electron injection from the left and hole injection from the right as shown in the figure. Assume that the cross-sectional area of the material ?=1 ??2, electron mobility ??=1312.75 ??2/? ?, and hole mobility ??=463.33 ??2/? ?. Find the total current (to one decimal place) flowing through the material. ?=300?, ?=1.6×10−19 ?, ?=8.62×10−5 ??/?, ?=1.38×10−23 ?/?, and 1 ??=1.6×10−19 ?. Explain how depletion and diffusion capacitances differ
- The conductivity for n-side is 1500 s/m and for p-side is 400 s/m in pn junction, while the conductivity of the pure silicon is 4 × 10-4 s/m. Find the barrier potential at 300°K, if the µn = 2.4µp?8. Each of the three insulators forming a string has a self capacitance of C farad. The shunt capacitance of each insulator is 0-2 C to earth and 0-1 C to line. A guard-ring increases the capacitance of line of the metal work of the lowest insulator to 0-3 C. Calculate the string efficiency of the arrangement: (i) with the guard ring, (ii) without guard ring. [(i) 95% (ii) 86-13%)Problem 2 In a P-type semiconductor, the Fermi level is 0.3 eV above the valance band at a room temperature of 300 "K. Determine the new position of the Fermi level for temperatures of (a) 350 "K and (b) 400 "K. The Fermi level in a P-type material is given by