An n-type defect in a semiconductor acts like a hydrogenic atom, with the exception that the dielectric constant of the vacuum is replaced by the dielectric constant for Si. If the dielectric constant for Si is 11.7 times larger than for the vacuum. The ionization energy for an electron in an n-type defect is approximately: A) 1.2 ev B) 3.4 eV C) 13.6 eV D 0.1 ev
An n-type defect in a semiconductor acts like a hydrogenic atom, with the exception that the dielectric constant of the vacuum is replaced by the dielectric constant for Si. If the dielectric constant for Si is 11.7 times larger than for the vacuum. The ionization energy for an electron in an n-type defect is approximately: A) 1.2 ev B) 3.4 eV C) 13.6 eV D 0.1 ev
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Transcribed Image Text:An n-type defect in a semiconductor acts like a hydrogenic atom, with the exception that the dielectric constant of the vacuum is
replaced by the dielectric constant for Si. If the dielectric constant for Si is 11.7 times larger than for the vacuum. The ionization
energy for an electron in an n-type defect is approximately:
A) 1.2 ev
B) 3.4 eV
13.6 eV
D) 0.1 ev
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