a) What is depletion region of ap-n junction diode? b) Describe in your own words the forward-bias and reverse-bias conditions of a p-n junction diode.
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- Here are some statements about a p-n junction diode. Some are TRUE and some are FALSE. i. Applying a negative bias to the p-side and a positive bias to the n-side allows a forward current flow. ii. When the p-n junction is under reverse bias, the Fermi level is continuous across the junction. iii. The forward bias current is made up of holes from the p-side and electrons from the n-side flowing across the junction. iv. Under reverse bias, you can get minority electrons flowing from the p-side to the n-side of the junction. v. To get a large built-in voltage, you need to heavily dope the p-side and n-side of the junction. vi. The built-in voltage (or contact potential) of a p-n junction is typically twice the value of the band-gap of the semiconductor. Which of the following statements is correct: (i) and (ii) are both FALSE (ii) and (v) are both FALSE (iii) and (vi) are both FALSEA. In your own words and with the aid of suitable diagrams, describe the following: a) The zener diode and its characteristics. b) Design a limitter circuit using diodes to limit the output voltage to 4.7V during the positive signwave and to -6.7V in the negative signwave. B. Consider the following circuit. Suppose that diode D1 is ideal. a) Give the state of the diode D1: conductive or blocking. Explain. b) Calculate the current flowing through D1. c) Calculate the voltage VR2 across the resistance R2. 1kQ D1 R1 R2 1) ImA 10V 4KQ C. In the circuit shown below the knee current for the ideal Zener diode is 10 mA. Calculate the minimum value of load resistance RL in order to maintain 5 volts across the load resistance RL. 1002 IL 10V V, = 5V A RDescribe how you will remember the forward- and reverse-bias state of the p-n junction diode. that is how you will remember the potential (positive or negative ) in applied in which terminal?
- Explain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage.In your own words and with the aid of suitable diagrams, describe the following: Explain what the barrier potential is and how it is developed in pn junction diode. What is the typical value of the barrier potential for a silicon diode?1. Describe in your own words the conditions established by forward and reverse bias conditions on a p-n junction diode and how the resulting current is affected.
- a) What is n-type semiconductor materials? What are the majority and the minority cariers? b) What is p-type semiconductor materials? What are the majority and the minority cariers? c) What is depletion region of a p-n junction diode? d) Describe in your own words the forward-bias and reverse- bias conditions of a p-n junction diode. e) Draw a Diode Symbol and label the anode and the cathode. Si Ge 2 ka f) Find V, in the circuit shown in +20 V 2 k2 15V Fig. Fuad Al-Mannai EENG261 Page 1Plot the I-V characteristics of a PN junction diode (linear and log scale) for different temperatures and plot the characteristics. Explain the observed behavior.Sketch the structure and symbol of a p-n junction diode and apply voltage so that to be reverse biased. ..
- (1) Describe the behaviour of a p-n junction under forward and reverse biasing in terms of semiconductor behaviour and sketch the V-I Characteristics of a p-n Junction.Consider the circuit shown in Figure 2. The cut-in voltage of each diode is . Let and assume both diodes are conducting. Determine if this is a valid assumption and explain your answer. And calculate the values of IR, ID, Ip2, and V.. Rj =1.7 kQ ww VB =1 V D1 Dz R2D 4 kQ Figure 24. If the diode is open in the circuit, the load voltage is? 5. If the resistor is ungrounded in the circuit, the voltage measured with a DMM between the top of the resistor and ground is closest to? 6. The load voltage measures 12 V in the circuit. The trouble may be? 7. Using the third approximation in the circuit, how low must R, be before the diode's bulk resistance must be considered? + Vs RL 1 k2 12 V Figure