a) Draw the energy band diagram of a MOSFET transistor, when -5 volts are applied to the drain contact.
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- a) Draw the energy band diagram of a MOSFET transistor, when -5 volts are applied to the drain contact. b) Explain what will happen to the Fermi level at the source contact and the drain contact in the following scenarios (Use an appropriate energy diagram to illustrate your answer): A positive voltage is applied to the drain contact. A positive voltage is applied to the source contact. c) Explain why current flow in a MOSFET transistor. Use a diagram to illustrate your answer.Describe the basic principle of operation of a bipolar junction transistor. Include explanation for the following : When minority carriers flow across the transistor Why the collector current is almost unaffected by the collector potentialGive a conclusion about BIPOLAR JUNCTION TRANSISTOR: OPERATION AND ITS CHARACTERISTIC CURVE
- A collector modulator is a balanced modulator. True False The information or intelligence is at the sidebands. O True False The tank circuit is used to increase carrier frequency in the diode modulator. True O False2. Provide a practical example where E-MOSFET and D-MOSFET are used together, explain how how it works.All field-effect transistors are unipolar rather than bipolar devices. That is, the main current through them is comprised either of through an N-type semiconductor * ..... .....
- Draw an I/V characteristic diagram to connect the common emitter, indicating on it the operating point Q and the load line with simplified explanation.4. The band gap between conduction and valance band in an insulator is (Low Very low High Moderate) 5. Operating point of a transistor must be independent of (Biasing Amplification Variations in parameters Filtration) 6. When a transistor operating at the central of the load line is declining, the current gain will change the Q-point (down up nowhere of the load line) 7. A bipolar junction transistor when used as a switch, operates in (cut-off and active region active and saturation region cut-off and saturation region all of these) 8. Inversion layer in an MOS circuit is made by (doping impact ionization tunnelling electric field) 9. What are the applications of semiconductor devices? (Microprocessors Analog eircuits High voltage applications All of these)Question 2 (a) To achieve correct operation when using a Bipolar Transistor how should the two p-n junctions be biased?
- Electronics Circuit: BJT biasing .A Voltage Divider bias NPN BJT (Beta = 80) circuit is connected to a 16VDC supply with the following components R1= 62 KOhms, R2= 9.1 KOhms, Rc= 3.9 KOhms, and Re= 0.68 KOhms. Determine the Emitter Voltage (Ve). a. 1.16 Volts b. 1.86 Volts c. 9.33 Volts d. 8.17 VoltsExplain the two types of MOSFETs (draw the physical structure as well). Also explain themajor difference between them regarding mode of operation?• In MOSFET, it is the foundation upon which the device will be constructed and is formed from a silicon base A. Substrate, B. Slab, C. Source, D. Base.