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- what is the schemtic diagram of TP4056 and Li-ion battery when they connect to each other. The picture given belowHi! Please help me answer this problem our topic here is about Diode in DC & AC Circuits. Please show your correct and complete solution. ASAP! THANK YOUUU!In the circuit shown below. Determine the following a. Vs (at the secondary) b. Vout (across RL) c. Vrip (ripple votage) d. VDC e. PIV (Peak Inverse Voltage) 10:1 Output 115 V mis 60 Hz RL 2.2 k) D, 50μF- All diodes are IN4001. Tund AlMannai EENG261 Page 5/11
- Q1. Determine the class of mater ial based on relative comparison for each energy diagram. Energy Energy Energy Conduction bund Energs gap Conduction band Energy gap Conduction band Overlap Valence band Valence bund Valence band (b) Assignment1- (ENEL2104) Page 1 Q2. What are the major carriers in the depletion region? Explain.The voltage drop of schottky diode is more than that of power diode? true or falesANSWER ALL WILL UPVOTE IF CORRECT 7. What is the maximum conduction angle for an SCR? a. 90, b. variable, c. 180, d.360 8. A breakover type of device can be represented as a long resistor with a diode tapped somewhere in the middle. a. SCR, b. BJT, c. FET, d. UJT 9. It is the ratio of the resistance at the base1 terminal to the resistance across the two bases. a. base resistance ratio, b. interbase resistance ratio, c. intrinsic standoff ratio, d. intrinsic resistance ratio 10. the duration (in degrees) of an AC cycle that the SCR is turned on a. turn on angle, b. firing angle, c. conduction angle, d. firing delay angle
- (02) DC Si Diode Circuit. (Course: Electronic Devices and Circuit Theory) What is the minimum value for RL needed to turn Zener diode ON?, And what is the maximum value for RL needed to turn Zener diode is ON? -Use Equation Operators or write it down on paper/digital paper. -Redraw and Apply. -You can add //comments for a better understanding. -Please answer without abbreviation. -Make it clean and clear typing/writing. Thank you.Date 03175996 28) A battery of emif 4V and grternal. xesistance 2n s joined to a desistor of 8 2 calculate the terminal potential difference. What additional xesistance in sedies with 8-2 sesistor Would produce a texminal pd of 3.6V? Taacher's Signalure2 - Which of the following methods cannot be used to determine the terminal names of the LED diode? A) Long connector ANOT, short connector KATOTB) Large plate KATOT inside diode, small plate ANOTC) The cut side in the diode body is KATOT, the other is ANOT.D) With the measuring instrument, the diode stage can be determined with +/- tip.E) Thick connector ANOT, thin connector KATOT
- Create the Diode Characteristic Curve for this data values. Diode Voltage (VD) Diode Current (ID) 0.890904 9.109 0.884515 7.115 0.876023 5.124 0.86333 3.137 0.837654 1.162 0.793023 0.206975 0.779114 0.120885 0.754079 0.04592 0.695273 0.004727 0.599882 0.000118256 0.499998 0.000002487 0.4 5.2464E-08 0.3 1.39E-09 0.2 2.23008E-10 0.1 1.00568E-10 0 0 -0.1 -1.0011E-09 -0.2 -2.00211E-09 -0.3 -3.0031E-09 -0.4 -4.00411E-09 -0.5 -5.0051E-09 -0.6 -6.0061E-09 -0.7 -7.0071E-09 -0.8 -8.0081E-09 -0.9 -9.00911E-09 -1 -1.001E-08 -2 -2.002E-08 -4 -4.004E-08 -6 -6.006E-08 -8 -8.008E-08 -10 -1.001E-07 -20 -2.002E-07 -40 -4.004E-07 -60 -6.006E-07 -80 -8.008E-07 -100 -0.000001001 -200 -0.000002002 -300 -0.000003003 -400 -0.000004004 -500 -0.000005005Give the meaning of each acronym of solid state devices. Also sketch the schematic symbol for each device. SUS Shockley diode D-MOSFET JFET SCR DIAC THYRISTOR Device TRIAC 1. 3. 4. 6. 8. 10. 12. 14. Symbol 2. 5. 7. 9. 11. 13. 15. Meaning No entryFAIRCHILD Discrete POWER & Signal Technologies SEMICONDUCTOR ru 1N4001 - 1N4007 Features • Low torward voltage drop. 10 a14 * High aurge eurrent cepablity. 0.160 4.06) DO 41 COLOR BAND DGNOTEs CAT-Cos 1.0 Ampere General Purpose Rectifiers Absolute Maximum Ratings T-26*Cuness atnerwioe rated Symbol Parameter Value Units Average Recttied Current 1.0 375" lead length a TA - 75°C Tsargei Peak Forward Surge Current 8.3 ms single halr-sine-wave Superimposed on rated load JEDEC method) 30 A Pa Total Device Dissipetion 2.5 20 Derste above 25°C Ra Tag Thermal Resistence, Junction to Amblent 5D Storage Temperature Range 55 to +175 -55 to +150 Operating Junetion Temperature PC "These rarings are imithg valuee above whien the serviceatity or any semiconductor device may te impaired. Electrical Characteristics T-20'Cunieas ofherwise roted Parameter Device Units 4001 4002 4003 4004 4005 4006 4007 Peak Repetitive Reverse Vellage Maximum RME votage DC Reverse Voltage Maximum Reverse Current @ rated VR…