3.4 Un A uniform bar of n-type silicon of 2-µm length has a voltage of 1 V applied across it. If ND = 10¹6/cm³ ‚ = 1350 cm²/V · s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-μm length, (c) the drift-current density, and (d) the resistance and drift current in the case that the silicon bar has a cross-sectional area of 0.25 µm². and

3.4 Un A uniform bar of n-type silicon of 2-µm length has a voltage of 1 V applied across it. If ND = 10¹6/cm³ ‚ = 1350 cm²/V · s, find (a) the electron drift velocity, (b) the time it takes an electron to cross the 2-μm length, (c) the drift-current density, and (d) the resistance and drift current in the case that the silicon bar has a cross-sectional area of 0.25 µm². and

Power System Analysis and Design (MindTap Course List)

6th Edition

ISBN:9781305632134

Author:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Publisher:J. Duncan Glover, Thomas Overbye, Mulukutla S. Sarma

Chapter4: Transmission Line Parameters

Section: Chapter Questions

Problem 4.2P: The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where...

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The temperature dependence of resistance is also quantified by the relation R2=R1[ 1+(T2T1) ] where R1 and R2 are the resistances at temperatures T1 and T2, respectively, and is known as the temperature coefficient of resistance. If a copper wire has a resistance of 55 at 20C, find the maximum permissible operating temperature of the wire if its resistance is to increase by at most 20. Take the temperature coefficient at 20C to be =0.00382.
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