3.15P) The excess electron concentration and Electic field is plotted in a bar of an n-type semiconductor. a) Show the directions of the electron drift and diffusion current flow and explain clearly.
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- The first two signals from a powdered sample has X rays (=1.47742A) diffracted at angles of 13.48 and 15.62. What type of cubic crystal is it, and what is the unit-cell parameter?9) A Cu monocrystal (FCC) of 10 cm length is pulled in tension. The stress axis is [¯123].a) Which is the stress system with the highest resolved shear stress?(b) If the extension of the crystal continues until a second slip systembecomes operational, what will this system be?(c) What rotation will be required to activate the second system?(d) How much longitudinal strain is required to activate the second system?2. (d) Describe three of the functions of the matrix in fibrereinforced composites. (e) With the aid of sketches compare and contrast the fatigue fracture appearance between an alloy that failed at a low fatigue load and one that failed at a high fatigue load. (f) Propose and briefly describe one non-destructive method that can be used to detect small cracks on the surface of a metallic alloy .
- 3.60 (a) What are the direction indices for a vec- 231 in a 342 11 tor that passes from point 10 to point 32 tetragonal unit cell? (b) Repeat part (a) for a rhombohedral unit cell.Which of the following doped semiconductors will be p-type and which will be n-type (i)Arsenic in germanium (ii) Germanium in Silicon (ii) Indium in Germanium(iv) Silicon on antimony sites in Indium antimonide (InSb).(v) Magnesium on Gallium sites in gallium nitride(GaN).Variable electrovalency is shown by which block elements?
- What is a matrix used in cyclic voltammetry? Define and give example of suchConsider a homogeneously doped n-type semiconductor at 300K. The electron concentration is equal to 10" cm', n- 10"cm', 1000 cm/V-sec. , 500 cm N-sec. To-2x10's. To-1x10's and the applied electric field is zero. A light beam in x-direction was applied to the sample resulting excess e-lh pair of 2 10 cm at x-0(edge of the sample). Assuming steady state, then hole diffusion current density at x-20jum is . .HA/em. (use kT-0.025eV at 300K) a)43 b)62 e) 93 d) 185 e) 280Strontium titanate (SrTiO3) is another wide bandgap semiconductor that has been investigated for use in dyesensitized solar cells. Depending on morphology and pHthe conduction band of SrTiO3 lies around -.2 V vs. SHE.What energies for the HOMO and LUMO of a sensitizingdye would you specify for electron injection into the conduction band of strontium titanate and for water oxidationby the radical cation formed by photoexcitation?
- The functioning of a liquid junction potential can be discussed in detail to obtain better understanding..Table 1 is the physical properties of intrinsic GaAs at 27°C (300 K). Assume that the band energy gap, E, of GaAs is 0.67 eV; Boltzmann’s constant, k = 8.62 × 105 eV/K. (b) Table 1 Physical Properties Intrinsic GaAs Electron mobility, He 0.720 m²/(V. s) Hole mobility, Hn 0.020 m²/(V.s) Intrinsic carrier concentration, n¡ 1.4 × 1012 m3 (i) Calculate the electrical conductivity of intrinsic GaAs at 125°C (398 K). (ii) Explain why the electrical conductivity of intrinsic GaAs increases with increasing temperature.(b) Answer both: i. Define Refractory material and give its one application. ii. Define porosity of refractory and its effect on strength.