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Solid state physics
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- A valence electron in a crystal absorbs a photon of wavelength, =0.300nm . This is just enough energy to allow the electron to jump from the valence band to the conduction band. What is the size of the energy gap?List five main characteristics of ionic crystals that result from their high dissociation energy.What is the longest wavelength for a photon that can excite a valence election into the conduction band across an energy gap of 0.80 eV?
- 6. Show that the Madelung constant of a one dimensional infinite ionic crystal is 1.386.QUESTION:3 A special semiconductor material is to be "designed". The semiconductor is to be n-type and doped with 1 x 1015 cm3 donor atoms. Assume complete ionization and that Na=0. The effective density of state functions are given by Nc = Nv =1.5 x 1019 cm3 and are independent of temperature. A particular semiconductor device fabricated with this material requires the electron concentration to be no greater than 1.01 x 1015 cm3 at T=400K. What is the minimum value of the band gap energy?Question Consider a germanium crystal. Calculate the number of the quantum states per cm and the energy levels per cm? in the valence band (VB) and the conduction band (CB). The mass density of the germanium crystal is 5.33 g/cm. i) 3.54x10 quantum states cm in each VB and CB i) 1.77x1023 quantum states cm in each VB and CB i) 8.85x102 quantum states cm in each VB and CB iv) 3.54x103 energy levels cm in each VB and CB v) 1.77x10 energy levels cm in each VB and CB vi) 8.85x10 energy levels cm in each VB and CB Please choose ene Cl, v NOi, iv e Cii, iv 4 Oi, v eONone of the above
- b) What are the major differences between MOS and BJT transistors? D AL J..11 1. M Abdul Hadi 200- 3QUESTION 10 The lattice energy of CsCl is 633 kJ/mol, the Madelung constant, a, is 1.763, and the Born exponent, n, is 10.7. The ionic radius of Cl- is known to be 1.81 A, e = 1.6 X 10-19 C and NA = 6.02 X 1023 atom/mol. The estimate ionic radius of Cst is: A. 1.69 Å B. 1.81 A C. 3.5 nm D. 3.5 ÅThere are several methods for removing electrons from the surface of a semiconductor. Can holes be removed from the surface? Explain.
- 1. Once again, consider the sample of silicon at 300 K in which the Fermi level is found 0.22 eV above the top of the valence band. Assume the semiconductor is not compensated. a) What type of semiconductor is this sample? Intrinsic? Extrinsic? p or n-type? b) What is the carrier concentration of electrons and holes in this sample at thermal equilibrium? MacBook AirQ1/ Assume that the Fermi energy level is 0.25 eV above the valence band energy. Let T 300 K. %3D Determine the probability of a state being empty of an electron at E = E, - 3kT/2 -5 Note: Boltzmann Constant is 8.61 x 10 eV/KQ8) Consider an n-type silicon crystal doped with 10º phosphorus (P) atoms/cm'. What are the electron and hole concentrations of this crystal if its intrinsic carrier concentration is 1 cm? Then, if it is doped with 10" boron (B) acceptors, what will be the electron and hole 10 concentrations?