1. You want to have a final silicon wafer with trenches as shown in the figure below. a) Please sketch cross-section of your step-by-step process flow for the final silicon structure shown below (you only have access to the given equipment and materials listed below). Use lμm for thickness of your silicon dioxide layer, and assume that etch selectivity between the materials are 1) photoresist:silicon dioxide = 1.5: 1, and 2) silicon dioxide:silicon = 1:3. b) What would be the height of the silicon trenches in the figure if the remaining thickness of the silicon dioxide layer was measured to be 0.3 um after the etching process?

Introductory Circuit Analysis (13th Edition)
13th Edition
ISBN:9780133923605
Author:Robert L. Boylestad
Publisher:Robert L. Boylestad
Chapter1: Introduction
Section: Chapter Questions
Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...
icon
Related questions
icon
Concept explainers
Question

help me with this hw problem please. thanks!

1. You want to have a final silicon wafer with trenches as shown in the figure below. a) Please sketch
cross-section of your step-by-step process flow for the final silicon structure shown below (you only
have access to the given equipment and materials listed below). Use lμm for thickness of your silicon
dioxide layer, and assume that etch selectivity between the materials are 1) photoresist:silicon dioxide
= 1.5: 1, and 2) silicon dioxide:silicon = 1:3. b) What would be the height of the silicon trenches in the
figure if the remaining thickness of the silicon dioxide layer was measured to be 0.3 um after the etching
process?
A silicon wafer
Inductively coupled plasma etching system (Reactive Ion Etch)
Photolithography equipment (mask aligner, spinner, hot plate, developing bench, developer, etc.)
Plasma-enhanced chemical vapor deposition (PECVD)
Positive photoresist (1.5um thick after development)
Acetone, methanol, and isopropyl-alcohol
Buffered Oxide Etchant (BOE)
Trench
Silicon substrate
Trench height
Transcribed Image Text:1. You want to have a final silicon wafer with trenches as shown in the figure below. a) Please sketch cross-section of your step-by-step process flow for the final silicon structure shown below (you only have access to the given equipment and materials listed below). Use lμm for thickness of your silicon dioxide layer, and assume that etch selectivity between the materials are 1) photoresist:silicon dioxide = 1.5: 1, and 2) silicon dioxide:silicon = 1:3. b) What would be the height of the silicon trenches in the figure if the remaining thickness of the silicon dioxide layer was measured to be 0.3 um after the etching process? A silicon wafer Inductively coupled plasma etching system (Reactive Ion Etch) Photolithography equipment (mask aligner, spinner, hot plate, developing bench, developer, etc.) Plasma-enhanced chemical vapor deposition (PECVD) Positive photoresist (1.5um thick after development) Acetone, methanol, and isopropyl-alcohol Buffered Oxide Etchant (BOE) Trench Silicon substrate Trench height
Expert Solution
steps

Step by step

Solved in 4 steps

Blurred answer
Knowledge Booster
Working and Construction of Diode
Learn more about
Need a deep-dive on the concept behind this application? Look no further. Learn more about this topic, electrical-engineering and related others by exploring similar questions and additional content below.
Similar questions
  • SEE MORE QUESTIONS
Recommended textbooks for you
Introductory Circuit Analysis (13th Edition)
Introductory Circuit Analysis (13th Edition)
Electrical Engineering
ISBN:
9780133923605
Author:
Robert L. Boylestad
Publisher:
PEARSON
Delmar's Standard Textbook Of Electricity
Delmar's Standard Textbook Of Electricity
Electrical Engineering
ISBN:
9781337900348
Author:
Stephen L. Herman
Publisher:
Cengage Learning
Programmable Logic Controllers
Programmable Logic Controllers
Electrical Engineering
ISBN:
9780073373843
Author:
Frank D. Petruzella
Publisher:
McGraw-Hill Education
Fundamentals of Electric Circuits
Fundamentals of Electric Circuits
Electrical Engineering
ISBN:
9780078028229
Author:
Charles K Alexander, Matthew Sadiku
Publisher:
McGraw-Hill Education
Electric Circuits. (11th Edition)
Electric Circuits. (11th Edition)
Electrical Engineering
ISBN:
9780134746968
Author:
James W. Nilsson, Susan Riedel
Publisher:
PEARSON
Engineering Electromagnetics
Engineering Electromagnetics
Electrical Engineering
ISBN:
9780078028151
Author:
Hayt, William H. (william Hart), Jr, BUCK, John A.
Publisher:
Mcgraw-hill Education,