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- Explain briefly the l-V characteristic of the real diode under the effect of the forward biasing.Consider diode circuit shown below with Vcc=5V and V₂ = 3V. U₁A HH +V₂ ū The peak inverse voltage on the diode is close to V₁ V. A VoQ2/ Determine the minimum input voltage required for regulation to be established in the figure. Assume an ideal zener diode with Izk = 1.5 mA and Vz = 14 V. R 560 0 VIN
- Determine the state of diode for the circuit shown and find ID, VD. Assume simplified model for the diode. 4k02 2V 1k02. Off, 0.00mA, 0.4V O Off, -0.005mA, 0.0v On, 0.48mA, 0.6v On, 0.55mA, 0.7v Option 5Select any diode from LTSpice Library. (The type of diode should either be RECTIFIER or SILICON) Create a Half-Wave Rectifier circuit. Use a resistor of 1000 Ohms. Input Voltage should be 95VAC - 65Hz Plot both the Input voltage and output voltage. Determine the Voltage drop across the diode by subtracting the output voltage to the input voltage peaks. Create a Bridge-Type Full Wave Rectifier Circuit. Repeat the steps done on the Half-Wave Rectifier circuit.Determine the minimum value of RL to ensure that the Zener diode is in the "on" state.
- Determine the value of RL that will establish maximum power conditions for the Zener diode.* The 4-layer diode in below figure is biased such that it is in the forward-conduction region. Detemine the anode current for and VBRF) = 20 V, VBE = 0.7 V, VCE(sat) = 0.2 V. Rs 1.0 kn VBIAS 25 Vconsider the figure below that shows an approximated reverse recovery turn-off characteristics for a power diode. Show that the following relation can express the total reverse recovery charge, Qrr = 1/2(trr*ts1) di1/dt =1/2(trr*ts21) di2/dt * ip Isl 1s2! -Ir