In the following problems, unless otherwise stated, assume Cox = 200 A/V², upCox 100 A/V², λ = 0, and VTH = 0.4 V for NMOS devices and -0.4 V for PMOS devices. 7.16. In the common-source stage of Fig. 7.49, W/L = 30/0.18 and λ = 0. (a) What gate voltage yields a drain current of 0.5 mA? (Verify that M₁ operates in saturation.) (b) With such a drain bias current, calculate the voltage gain of the stage. VDD = 1.8 V T Rp 2kQ Vout مـو = VinM₁ Figure 7.49

In the following problems, unless otherwise stated, assume Cox = 200 A/V², upCox 100 A/V², λ = 0, and VTH = 0.4 V for NMOS devices and -0.4 V for PMOS devices. 7.16. In the common-source stage of Fig. 7.49, W/L = 30/0.18 and λ = 0. (a) What gate voltage yields a drain current of 0.5 mA? (Verify that M₁ operates in saturation.) (b) With such a drain bias current, calculate the voltage gain of the stage. VDD = 1.8 V T Rp 2kQ Vout مـو = VinM₁ Figure 7.49

Introductory Circuit Analysis (13th Edition)

13th Edition

ISBN:9780133923605

Author:Robert L. Boylestad

Publisher:Robert L. Boylestad

Chapter1: Introduction

Section: Chapter Questions

Problem 1P: Visit your local library (at school or home) and describe the extent to which it provides literature...

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An SCR with a 5V gate trigger level is used with a 12V zener diode, and the capacitor is 0.15uF. What value of R will give full control of the power to the load down to zero? Refer to figure 7.11 in your textbook.
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The PMOS transistor has V7=-1V, Kp-8µA/V2, W/L=25, lambda=D0. For l-100HA, find the Vsp and Vsg for R = (a)0 (b)20k (c)50k (d)100k -10 V
/ Design a circuit using an n-channel E-MOSFET with the following datasheet specifications: Ixon) = 500 mA at VGS 10 V and VGS(h) = 1 V. Use a (+12 V) dc supply voltage with voltage divider bias. The voltage at the drain with respect to ground is to be (+7.78 V), the voltage at the source with respect to the ground is to be (+2.1 V), and the maximum current from the supply is to be 21.1 mA.
Most of the following statements about integrated circuits arecorrect, but one is not. Which statement is NOT true? Select one: a. Transistors are constructed in a small area of an integrated circuit,and are connected to other transistors by wires that are embedded inthe integrated circuit b. Wires that carry signals may be embedded in a substrate without a shortcircuit because a short circuit would require a signal to cross areverse biased junction c. Each transistor on an integrated circuit is manufactured individually,one at a time d. An integrated circuit contains several layers
D 7.83 A source folower is required to deliver a 0.5-V peak sinusoid to a 2- k2 load. If the peak amplitude of vgs is to be limited to 50 mV, and the MOSFET transconductance parameter k, is 5 mA/V?, what is the lowest value of Ip at which the MOSFET can be biased? At this bias current, what are the maximum and minimum currents that the MOSFET will be conducting (at the positive and negative peaks of the output sine wave)? What must the peak amplitude of vsig be?
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7. Show that the DC alpha of the transistor is given by: 1+ Bac %3D a dc Bac + 1
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