In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: 100%

Electric Motor Control
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ISBN:9781133702818
Author:Herman
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Chapter59: Motor Startup And Troubleshooting Basics
Section: Chapter Questions
Problem 12SQ: How is a solid-state diode tested? Explain.
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In a silicon sample at equilibrium the Fermi level is located
above the middle of the band gap by 0.38eV. The phosphorus
donor states are located 0.04 eV below the conduction band.
Determine the percentage ionization of the phosphorus atoms
at T = 300 K.
Answer: ~ 100%
a Share
17 18
(5 +
+
ď
+
Transcribed Image Text:N N un Untitled document ✩ ✪ File Edit View Insert Format Tools Extensions Help Arial SUMMARY OUTLINE 100% Headings that you add to the document will appear here. Normal text + 11 + BIUA 3 Carrier Statistics Example 3.4 GO 9 10 11 IE 12 13 1:14 15 In a silicon sample at equilibrium the Fermi level is located above the middle of the band gap by 0.38eV. The phosphorus donor states are located 0.04 eV below the conduction band. Determine the percentage ionization of the phosphorus atoms at T = 300 K. Answer: ~ 100% a Share 17 18 (5 + + ď +
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